FQD5N20L

LOGIC 200V N沟道MOSFET 200V LOGIC N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.

Features

• 3.8A, 200V, RDSon= 1.2Ω@VGS= 10 V

• Low gate charge typical 4.8 nC

• Low Crss typical 6.0 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Low level gate drive requirement allowing direct operation from logic drivers

• RoHS Compliant

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