FQD5N20LTM

Power Field-Effect Transistor, 3.8A ID, 200V, 1.25Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3

N-Channel 200 V 3.8A Tc 2.5W Ta, 37W Tc Surface Mount TO-252AA

得捷:
POWER FIELD-EFFECT TRANSISTOR, 3

艾睿:
Trans MOSFET N-CH 200V 3.8A 3-Pin2+Tab DPAK T/R

安富利:
Trans MOSFET N-CH 200V 3.8A 3-Pin2+Tab DPAK T/R

Verical:
Trans MOSFET N-CH 200V 3.8A 3-Pin2+Tab DPAK T/R

Win Source:
MOSFET N-CH 200V 3.8A DPAK

DeviceMart:
MOSFET N-CH 200V 3.8A DPAK