A2G22S251-01SR3

射频放大器 Airfast RF Power GaN Transistor, 1805-2200 MHz, 48 W Avg., 48 V

Overview

The 48 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1805 to 2200 MHz.

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## Features

* High Terminal Impedances for Optimal Broadband Performance

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications

* RoHS Compliant

## Features RF Performance Table

### 2000 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 200 mA, Pout = 48 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

1805 MHz| 17.4| 33.5| 7.0| –34.7| –14

1990 MHz| 17.3| 34.3| 7.1| –35.1| –11

2170 MHz| 17.7| 37.5| 6.8| –33.2| –12