A2G26H281-04SR3

RF Power Transistor,2496 to 2690MHz, - W, Typ Gain in dB is 14.3 @ 2635MHz, 48V, GaN, SOT1826

Overview

The A2G26H281-04S 50 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

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## Features

* High terminal impedances for optimal broadband performance

* Advanced high performance in-package Doherty

* Able to withstand extremely high output VSWR and broadband operating conditions

* RoHS compliant

## Features RF Performance Table

### 2600 MHz

Typical Doherty single-carrier W-CDMA characterization performance: VDD = 48 Vdc, IDQA = 150 mA, VGSB = –5.4 Vdc, Pout = 50 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

2575 MHz| 14.3| 61.9| 7.2| –29.1

2605 MHz| 14.3| 61.7| 7.1| –29.5

2635 MHz| 14.3| 60.9| 6.8| –30.4