RFP12P08

12A ， 80V和100V ， 0.300欧姆，P沟道功率MOSFET 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs

12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs

The , and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors

designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features

• 12A, 80V and 100V

• rDSON= 0.300Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

\- TB334 “Guidelines for Soldering Surface Mount

  Components to PC Boards”