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RFP15N08L

15A , 80V , 0.140欧姆,逻辑电平, N沟道功率MOSFET 15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET

15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET

The is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5 volt driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control from logic circuit supply voltages.

Features

• 15A, 80V

•rDSON= 0.140Ω

• Design Optimized for 5 Volt Gate Drive

• Can be Driven Directly from Q-MOS, N-MOS, TTL Circuits

• SOA is Power Dissipation Limited

• 175oC Rated Junction Temperature

• Logic Level Gate

• High Input Impedance

• Related Literature

\- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

RFP15N08L PDF数据文档
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