IRFR1205PBF

55V,0.027Ω,44A,N沟道功率MOSFET

Description

Fifth Generation HEXFETs from utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

• Ultra Low On-Resistance

• Surface Mount IRFR1205

• Straight Lead IRFU1205

• Fast Switching

• Fully Avalanche Rated

• Lead-Free