BC857BE6327HTSA1

Infineon BC857BE6327HTSA1 , PNP 晶体管, 100 mA, Vce=45 V, HFE:220, 3引脚 SOT-23封装

小信号 PNP ，

欧时:
Infineon BC857BE6327HTSA1 , PNP 晶体管, 100 mA, Vce=45 V, HFE:220, 250 MHz, 3引脚 SOT-23封装

得捷:
TRANS PNP 45V 0.1A SOT23

贸泽:
Bipolar Transistors - BJT PNP 45 V 100 mA

艾睿:
Use this versatile PNP BC857BE6327HTSA1 GP BJT from Infineon Technologies to design various electronic circuits. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.

Chip1Stop:
Trans GP BJT PNP 45V 0.1A Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT PNP 45V 0.1A 330mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS PNP 45V 0.1A SOT-23