BCR48PNH6327XTSA1

单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

Summary of Features:

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Switching circuit, inverter, interface circuit, driver circuit

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Two galvanic internal isolated NPN/PNP Transistors in one package

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Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ PNP: R1= 2.2kΩ, R2 = 47kΩ

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Pb-free RoHS compliant package

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Qualified according AEC Q101