BSP296

INFINEON  BSP296  晶体管, MOSFET, N沟道, 1 A, 100 V, 800 mohm, 10 V, 1.4 V

最大源漏极电压VdsDrain-Source Voltage| \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 14V 最大漏极电流IdDrain Current| -1.1A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.43Ω @-1.6A,-10V 开启电压Vgs（th）Gate-Source Threshold Voltage| 0.8-1.8V 耗散功率PdPower Dissipation| 1.79W Description & Applications| • N-Channel • Enhancement mode • Logic Level • dv/dt rated 描述与应用| •N沟道 •增强模式 •逻辑电平 •dv / dt的额定

e络盟:
INFINEON  BSP296  晶体管, MOSFET, N沟道, 1 A, 100 V, 800 mohm, 10 V, 1.4 V

Win Source:
SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level