SI1308EDL-T1-GE3

VISHAY  SI1308EDL-T1-GE3  晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.11 ohm, 10 V, 600 mV

The is a 30V N-channel TrenchFET® Power MOSFET with power dissipation at 500mW.

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PWM optimized for fast switching

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100% Rg Tested

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Up to 1800V ESD protection

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Halogen-free

ESD sensitive device, take proper precaution while handling the device.