FDD8778

FAIRCHILD SEMICONDUCTOR  FDD8778  晶体管, MOSFET, N沟道, 35 A, 25 V, 0.0116 ohm, 10 V, 1.5 V

The is a N-channel MOSFET produced using Semiconductor"s PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low RDS ON.

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Low gate charge

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Low gate resistant