FDD8444

FAIRCHILD SEMICONDUCTOR  FDD8444  晶体管, MOSFET, N沟道, 17.5 A, 40 V, 0.004 ohm, 10 V, 2.5 V

The is a N-channel MOSFET produced using Semiconductor"s PowerTrench® process. It is suitable for electronic transmission, distributed power architecture and VRMs applications.

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Low miller charge

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Low Qrr body diode

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UIS Capability single pulse and repetitive pulse

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Qualified to AEC-Q101