SIR414DP-T1-GE3

VISHAY  SIR414DP-T1-GE3  晶体管, MOSFET, N沟道, 50 A, 40 V, 2.3 mohm, 10 V, 1 V

The is a 40VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for synchronous rectification and secondary side DC-to-DC applications.

.

100% Rg tested

.

100% UIS tested

.

Halogen-free

.

-55 to 150°C Operating temperature range