SIA910EDJ-T1-GE3

VISHAY  SIA910EDJ-T1-GE3  双路场效应管, MOSFET, 双N沟道, 4.5 A, 12 V, 0.023 ohm, 4.5 V, 400 mV

The is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for load switch for portable and high frequency DC-to-DC converter applications.

.

Halogen-free

.

TrenchFET® power MOSFET

.

Thermally enhanced PowerPAK® package

.

Small footprint

.

Low ON-resistance

.

Typical ESD protection

.

100% Rg tested