SIA931DJ-T1-GE3

VISHAY  SIA931DJ-T1-GE3  双路场效应管, MOSFET, 双P沟道, -4.5 A, -30 V, 0.052 ohm, -10 V

The is a dual P-channel MOSFET housed in a surface-mount package. It is suitable for battery and load switch, DC-to-DC converter applications.

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Halogen-free

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TrenchFET® gen III power MOSFET

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Thermally enhanced PowerPAK® package

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Small footprint

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Low ON-resistance

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100% Rg tested