2SJ465

2SJ465 P沟道MOS场效应管 -16V 2A 0.54ohm SOT-89 marking/标记 Z9 低导通电阻 低漏电流

最大源漏极电压VdsDrain-Source Voltage| -16V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 8V 最大漏极电流IdDrain Current| -2A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.54Ω @-1A,-4V 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.5--1.7V 耗散功率PdPower Dissipation| 150mW/0.15W Description & Applications| TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2.5V gate drive low drain-source on resistance high forward transfer admittance low leakage current enhancement mode 描述与应用| 场效应的硅P沟道MOS型 2.5V栅极驱动 低漏源电阻 高正向转移导纳 低漏电流 增强模式