2SJ496TZ-E

硅P沟道MOS场效应晶体管 Silicon P Channel MOS FET

Description

High speed power switching

Features

• Low on-resistance

RDS on = 0.12 Ω typ. at VGS = –10 V, ID = –2.5 A

• 4 V gate drive devices.

• Large current capacitance ID = –5 A

艾睿:
Trans MOSFET P-CH Si 60V 5A 3-Pin TO-92 Mod T/R

Chip1Stop:
Trans MOSFET P-CH 60V 5A 3-Pin TO-92 Mod T/R

Verical:
Trans MOSFET P-CH Si 60V 5A 3-Pin TO-92 Mod T/R