VSMY1850X01

VISHAY  VSMY1850X01  红外发射器, 高速, 120 °, 0805, 100 mA, 10 ns, 10 ns

The is a 850nm Infrared Emitting Diode based on GaAlAs surface emitter chip technology with high radiant intensity, high optical power and high speed, moulded in clear. It is suitable for high pulse current operation and floor life of 168h, MSL 3, according to J-STD-020.

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AEC-Q101 qualified

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High reliability

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High radiant power

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High radiant intensity

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±60° Angle of half sensitivity