VSMY2850RG

VISHAY  VSMY2850RG  红外发射器, 高速, 10 °, 100 mA, 1.9 V, 10 ns, 10 ns

The is a 850nm Infrared Emitting Diode based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, moulded in clear. It is suitable for high pulse current operation and floor life of 4 weeks, MSL 2a, according to J-STD-020.

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High reliability

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High radiant power

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High radiant intensity

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Terminal configurations - Gull-wing or reserve gull-wing

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±10° Angle of half intensity