IRFZ46NLPBF

Trans MOSFET N-CH 55V 53A 3Pin3+Tab TO-262 Tube

Description

Advanced HEXFET® Power MOSFETs from utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 Advanced Process Technology

 Surface Mount IRFZ46NS

 Low-profile through-hole IRFZ46NL

 175°C Operating Temperature

 Fast Switching

 Fully Avalanche Rated

 Lead-Free