IRFZ44VZPBF

INTERNATIONAL RECTIFIER  IRFZ44VZPBF  场效应管, MOSFET, N沟道, 60V, 57A TO-220AB

Power MOSFET, Pulsed Drain Current 230 A, Input Capacitance 1690 pF

* Advanced process technology

* Ultra low on-resistance

* 175 °C operating temperature

* Fast switching

* Repetitive avalanche allowed up to Tjmax

* Lead-free

Specifically designed for automotive applications, this HEXFET® power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 °C junction operating temperature