STD2HNK60Z-1

STMICROELECTRONICS  STD2HNK60Z-1  功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 3.75 V

The is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of ST"s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

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Gate charge minimized

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100% avalanche tested

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Extremely high dv/dt capability

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ESD improved capability

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New high voltage benchmark