IGW30N65L5
Infineon’s new L5 low saturation voltage V CEsat TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
Summary of Features:
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- Lowest saturation voltage V CEsat of only 1.05V
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- Low switching losses of 1.6mJ @ 25°C for 30A IGBT
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- High thermal stability of electrical parameters - only 2% drift with T j increase from 25°C to 175°C
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- Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package
Benefits:
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- Higher efficiency for 50Hz
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- Longer lifetime and higher reliability of IGBT
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- High design reliability due to stable thermal performance
Target Applications:
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- UPS
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- Solar
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- Welding