IGW30N65L5

Infineon’s new L5 low saturation voltage V CEsat TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.

Summary of Features:

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Lowest saturation voltage V CEsat of only 1.05V

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Low switching losses of 1.6mJ @ 25°C for 30A IGBT

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High thermal stability of electrical parameters - only 2% drift with T j increase from 25°C to 175°C

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Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package

Benefits:

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Higher efficiency for 50Hz

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Longer lifetime and higher reliability of IGBT

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High design reliability due to stable thermal performance

Target Applications:

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UPS

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Solar

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Welding