FDP150N10

FAIRCHILD SEMICONDUCTOR  FDP150N10  晶体管, MOSFET, N沟道, 57 A, 100 V, 0.012 ohm, 10 V, 2.5 V

The is a N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification for ATX/server/telecom PSU, battery protection circuit and uninterruptible power supplies.

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Fast switching speed

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Low gate charge

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High performance Trench technology for extremely low RDS ON

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High power and current handling capability