FDP12N60NZ

FAIRCHILD SEMICONDUCTOR  FDP12N60NZ  功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.53 ohm, 10 V, 3 V

The is a N-channel UniFET™ II high voltage MOSFET based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest ON-state resistance among the planar MOSFET and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power, ATX and electronic lamp ballasts.

.

Low gate charge 26nC

.

Low Crss 12pF

.

100% avalanche tested

.

Improved dV/dt capability

.

ESD improved capability