PXFC192207NFV1R500XUMA1
High Power RF LDMOS FET, 220W, 28V, 1805 – 1990MHz
Summary of Features:
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- Broadband internal input and output matching
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- Typical Pulsed CW performance, 1880 MHz, 28 V, 10 μs pulse width, 10% duty cycle, single side
\- Output power at P1dB = 220 W
\- Efficiency = 56%
\- Gain = 19 dB
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- Typical single-carrier WCDMA performance, 1880 MHz, 28 V, 10 dB PAR @ 0.01% CCDF, Test Model 1 with 64DPCH
\- Output power = 50 W avg
\- Efficiency = 34%
\- Gain = 20 dB
\- ACPR = –33 dBc @ 5 MHz
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- Capable of handling 10:1 VSWR @28 V, 220 W CW output power
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- Integrated ESD protection: Human Body Model, Class 1C per JESD22-A114
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- Low thermal resistance
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- Package: PG-HBSOF-4, plastic