MJD112T4

STMICROELECTRONICS  MJD112T4  单晶体管 双极, NPN, 100 V, 25 MHz, 20 W, 2 A, 1000 hFE

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 100V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 100V 集电极连续输出电流ICCollector CurrentIC| 2A 截止频率fTTranstion FrequencyfT| 25MHz 直流电流增益hFEDC Current GainhFE| 500~2000 管压降VCE（sat）Collector-Emitter Saturation Voltage| 2V~3V 耗散功率PcPower Dissipation| Description & Applications| Complementary power Darlington transistors Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode 描述与应用| Complementary power Darlington transistors HFE线性度好 ■高FT  频率 ■单片达林顿配置 综合反平行集电极 - 发射极二极管