AIHD06N60RATMA1
IC DISCRETE 600V TO252-3
IGBT 沟槽型场截止 600 V 12 A 100 W 表面贴装型 PG-TO252-3-313
得捷:
IC DISCRETE 600V TO252-3
艾睿:
IGBT with integrated diode in packages offering space Saving advantage
Win Source:
IC DISCRETE 600V TO252-3
IC DISCRETE 600V TO252-3
IGBT 沟槽型场截止 600 V 12 A 100 W 表面贴装型 PG-TO252-3-313
得捷:
IC DISCRETE 600V TO252-3
艾睿:
IGBT with integrated diode in packages offering space Saving advantage
Win Source:
IC DISCRETE 600V TO252-3
图片 | 型号 | 厂商 | 下载 |
---|---|---|---|
![]() | AIHD06N60RATMA1 | Infineon 英飞凌 | |
![]() | AIHD10N60RATMA1 | Infineon 英飞凌 | |
![]() | AIHD15N60RATMA1 | Infineon 英飞凌 |