PTFB090901FAV2XWSA1

射频金属氧化物半导体场效应RF MOSFET晶体管 RFP-LDMOS 9

Summary of Features:

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Input and output internal matching

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Typical CW performance, 960 MHz, 28 V, 90 W output power at P1dB, 65% efficiency

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Typical two-carrier WCDMA performance, 960 MHz, 28 V

\- 20 W average output power

\- 20.8 dB gain

- 35% Efficiency

- –35 dBc intermodulation distortion

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Integrated ESD protection

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Low thermal resistance

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Pb-free and RoHS-compliant

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Capable of handling 10:1 VSWR @ 28 V, 90 W CW output power

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Package: H-37265-2, earless