PTFB181702FCV1R250XTMA1

High Power RF LDMOS FET, 170W, 28V, 1805 – 1880MHz

Summary of Features:

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Broadband input and output matching

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Typical CW performance at 1842 MHz, 28 V

\- Output power at P1dB = 180 W

\- Efficiency = 58%

\- Gain = 18.5 dB

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Capable of handling 10:1 VSWR @ 28 V, 170 W CW output power

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Integrated ESD protection 

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Low thermal resistance

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Pb-free and RoHS compliant

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Package: H-37248-4, earless