BSP324H6327XTSA1

INFINEON  BSP324H6327XTSA1  晶体管, MOSFET, N沟道, 170 mA, 400 V, 13.6 ohm, 10 V, 1.9 V 新

SIPMOS® N 通道 MOSFET

得捷:
MOSFET N-CH 400V 170MA SOT223-4

欧时:
### Infineon SIPMOS® N 通道 MOSFET### MOSFET 晶体管，InfineonInfineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能

e络盟:
晶体管, MOSFET, N沟道, 170 mA, 400 V, 13.6 ohm, 10 V, 1.9 V

艾睿:
Compared to traditional transistors, BSP324H6327XTSA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1800 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device is made with sipmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 400V 0.17A 4-Pin SOT-223 T/R

Chip1Stop:
Trans MOSFET N-CH 400V 0.17A Automotive 4-Pin3+Tab SOT-223 T/R

TME:
Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223

Verical:
Trans MOSFET N-CH 400V 0.17A Automotive 4-Pin3+Tab SOT-223 T/R

Newark:
# INFINEON  BSP324H6327XTSA1  MOSFET, N-CH, 400V, 0.17A, SOT-223-4 New

Win Source:
MOSFET N-CH 400V 170MA SOT-223