2N3055

互补硅功率晶体管 Complementary Silicon Power Transistors

The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The NPN and MJ2955 PNPare complementary devices.

Features

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DC Current Gain - hFE = 20-70 @ IC = 4 Adc

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Collector-Emitter Saturation Voltage - VCEsat = 1.1 Vdc Max @ IC = 4 Adc

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Excellent Safe Operating Area

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Pb-Free Packages are Available