IRF2804PBF

N沟道,40V,75A,2mΩ@10V

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

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*Features:**

* Advanced Process Technology

* Ultra Low On-Resistance

* 175°C Operating Temperature

* Fast Switching

* Repetitive Avalanche Allowed Up to Tj Max.

* Lead-Free