IPB60R280C6ATMA1

N沟道 600V 13.8A

表面贴装型 N 通道 600 V 13.8A（Tc） 104W（Tc） PG-TO263-3

得捷:
MOSFET N-CH 600V 13.8A D2PAK

立创商城:
N沟道 600V 13.8A

艾睿:
Make an effective common source amplifier using this IPB60R280C6ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 104000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes coolmos technology.

TME:
Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3

Verical:
Trans MOSFET N-CH 600V 13.8A 3-Pin2+Tab D2PAK T/R