STGB10NC60KDT4

STMICROELECTRONICS  STGB10NC60KDT4  单晶体管, IGBT, 10 A, 2.5 V, 60 W, 600 V, TO-263, 3 引脚

IGBT 分立，STMicroelectronics

### IGBT 分立件和模块，STMicroelectronics

绝缘栅级双极性或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

欧时:
STMicroelectronics STGB10NC60KDT4 N沟道 IGBT, Vce=600 V, 20 A, 1MHz, 3引脚 D2PAK TO-263封装

得捷:
IGBT 600V 20A 65W D2PAK

立创商城:
STGB10NC60KDT4

艾睿:
Don&s;t be afraid to step up the amps in your device when using this STGB10NC60KDT4 IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 60000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

安富利:
Trans IGBT Chip N-CH 600V 20A 3-Pin2+Tab D2PAK T/R

富昌:
STGB10NC60K 系列 N-沟道 600 V 10 A 短路 PowerMESH IGBT - D2PAK

Chip1Stop:
Trans IGBT Chip N-CH 600V 20A 3-Pin2+Tab D2PAK T/R

Verical:
Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin2+Tab D2PAK T/R

Newark:
IGBT Single Transistor, 10 A, 2.5 V, 65 W, 600 V, TO-263, 3 Pins

DeviceMart:
IGBT N-CHAN 600V 10A D2PAK

Win Source:
IGBT 600V 20A 65W D2PAK