ZXTN2010A

Trans GP BJT NPN 60V 4.5A 710mW Automotive 3Pin E-Line

- 双极 BJT - 单 NPN 130MHz 通孔 E-Line（TO-92 兼容）

得捷:
TRANS NPN 60V 4.5A E-LINE

艾睿:
The versatility of this NPN ZXTN2010A GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 710 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V.

安富利:
Trans GP BJT NPN 60V 4.5A 3-Pin E-Line