IRF9630PBF

VISHAY  IRF9630PBF  晶体管, MOSFET, P沟道, -6.5 A, -200 V, 800 mohm, -10 V, 4 V

The is a -200V single P-channel HEXFET® Power MOSFET, third generation HEXFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.

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Dynamic dV/dt rating

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Repetitive avalanche rated

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Easy to parallel

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Simple drive requirements