IPD068P03L3GATMA1

INFINEON  IPD068P03L3GATMA1  晶体管, MOSFET, P沟道, -70 A, -30 V, 0.005 ohm, -10 V, -1.5 V

The IPD068P03L3 G is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics.

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Enhancement-mode

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100% Avalanche rated

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Small signal packages approved to AEC-Q101

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Qualified to JEDEC for target applications

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Halogen-free, Green device