JANTX2N5667

NPN硅功率开关晶体管 NPN POWER SILICON SWITCHING TRANSISTOR

brings you the solution to your high-voltage BJT needs with their NPN general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.