2N2369AUB

硅NPN开关晶体管 NPN SILICON SWITCHING TRANSISTOR

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 4.5 V. Its maximum power dissipation is 360 mW. It has a maximum collector emitter voltage of 15 V and a maximum emitter base voltage of 4.5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.