FDS4465

FAIRCHILD SEMICONDUCTOR  FDS4465.  晶体管, MOSFET, P沟道, -13.5 A, -20 V, 8.5 mohm, -4.5 V, -600 mV

The is a P-channel MOSFET produced using rugged gate version of Semiconductor"s advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage 1.8 to 8V. It is suitable for load switch and battery protection application.

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Fast switching speed

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High performance Trench technology for extremely low RDS ON

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High current and power handling capability