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IXGA20N120B3

Trans IGBT Chip N-CH 1200V 36A 180000mW 3Pin2+Tab D2PAK

IGBT PT 表面贴装型 TO-263(IXGA)


得捷:
IGBT 1200V 36A 180W TO263


艾睿:
The IXGA20N120B3 IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 180000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


IXGA20N120B3 PDF数据文档
图片 型号 厂商 下载
IXGA20N120B3 IXYS Semiconductor
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IXGA16N60C2 IXYS Semiconductor
IXGA16N60C2D1 IXYS Semiconductor
IXGA7N60BD1 IXYS Semiconductor
IXGA7N60C IXYS Semiconductor
IXGA7N60CD1 IXYS Semiconductor
IXGA16N60B2 IXYS Semiconductor
IXGA120N30TC IXYS Semiconductor
IXGA12N60B IXYS Semiconductor
IXGA12N60C IXYS Semiconductor