IXGA20N120B3

Trans IGBT Chip N-CH 1200V 36A 180000mW 3Pin2+Tab D2PAK

IGBT PT 表面贴装型 TO-263（IXGA）

得捷:
IGBT 1200V 36A 180W TO263

艾睿:
The IXGA20N120B3 IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 180000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.