US1MHE3/5AT

DIODE FAST REC 1kV 1A DO214AC

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Ultrafast reverse recovery time

• Low switching losses, high efficiency

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

• AEC-Q101 qualified

得捷:
DIODE GEN PURP 1KV 1A DO214AC