AFT20P060-4GNR3

RF Power Transistor,1805 to 2170MHz, 60W, Typ Gain in dB is 18.9 @ 2170MHz, 28V, LDMOS, SOT1825

Overview

The AFT20P060-4NR3 and 6.3 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.

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## Features

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.

## Features RF Performance Tables

### 2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 450 mA, Pout = 6.3 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

2110 MHz| 18.6| 20.0| 9.4| –43.0| –13

2140 MHz| 18.8| 20.0| 9.2| –42.5| –14

2170 MHz| 18.9| 20.0| 9.1| –42.5| –14

### 1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 450 mA, Pout = 6.3 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

1805 MHz| 18.8| 23.0| 9.5| –43.0| –10

1840 MHz| 19.1| 23.8| 9.4| –42.9| –15

1880 MHz| 18.7| 24.5| 9.1| –42.9| –10