AFT20P060-4GNR3
数据手册.pdfRF Power Transistor,1805 to 2170MHz, 60W, Typ Gain in dB is 18.9 @ 2170MHz, 28V, LDMOS, SOT1825
Overview
The AFT20P060-4NR3 and 6.3 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.
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## Features
* Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Designed for Digital Predistortion Error Correction Systems
* Optimized for Doherty Applications
* RoHS Compliant
* In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.
## Features RF Performance Tables
### 2100 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 450 mA, Pout = 6.3 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- * | **IRL
- .
- *
\---|---|---|---|---|---
2110 MHz| 18.6| 20.0| 9.4| –43.0| –13
2140 MHz| 18.8| 20.0| 9.2| –42.5| –14
2170 MHz| 18.9| 20.0| 9.1| –42.5| –14
### 1800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 450 mA, Pout = 6.3 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- * | **IRL
- .
- *
\---|---|---|---|---|---
1805 MHz| 18.8| 23.0| 9.5| –43.0| –10
1840 MHz| 19.1| 23.8| 9.4| –42.9| –15
1880 MHz| 18.7| 24.5| 9.1| –42.9| –10