GT50J325

TOSHIBA  GT50J325  单晶体管, IGBT, 50 A, 2.45 V, 240 W, 600 V, TO-3P, 3 引脚

The from is a N channel silicon insulated gate bipolar transistor in through hole TO-3P package. IGBT typically used at fast switching and high power switching applications.

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Fourth generation IGBT

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Enhancement mode type

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Fast switching

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Operating frequency up to 50KHz

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Maximum collector emitter saturation voltage of 2.45V

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FRD included between emitter and collector

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Collector emitter voltage VCES of 600V

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DC collector current of 50A

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Junction temperature of 150°C

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Collector power dissipation of 240W