GT50G321

Trans IGBT Chip N-CH 400V 50A 3Pin TO-3PLH

The 4th Generation

Current Resonance Inverter Switching Applications

• FRD included between emitter and collector

• Enhancement-mode

• High speed: tf = 0.30 µs typ. IC = 60 A

• Low saturation voltage: VCE sat = 1.8 V typ. IC = 60 A

Chip1Stop:
Trans IGBT Chip N-CH 400V 50A 3-Pin TO-3PLH

Win Source:
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT