PDTC143TT

NXP  PDTC143TT  单晶体管 双极, BRT, NPN, 50 V, 250 mW, 100 mA, 200 hFE

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| 50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| 50V 集电极连续输出电流IC Collector CurrentIC| 100mA/0.1A 基极输入电阻R1 Input ResistanceR1| 4.7KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 电阻比R1/R2 Resistance Ratio| 直流电流增益hFE DC Current GainhFE| 200 截止频率fT Transtion FrequencyfT| 耗散功率Pc Power Dissipation| 0.25W /250mW Description & Applications| FEATURES • Built-in bias resistor R1 typ. 4.7 kΩ • Simplification of circuit design • Reduces number of components and board space. 描述与应用| 特性 •内置偏置电阻R1（典型值4.7kΩ） •简化电路设计 •减少元件数量和电路板空间